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| Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN 1 2 3 Base Collector;connected to mounting base emitter DESCRIPTION LIMITING VALUES SYMBOL VCBO VCEO VEBO IC ICM IB Ptot Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Total power dissipation Operating and storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 250 100 10 18 25 5 85 -55~150 ae UNIT V V V A A A W JMnic Product Specification www.jmnic.com Silicon Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-base breakdown voltage Emitter-base breakdwon voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Emitter-base saturation voltage Emitter-base saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IE=1mA ;IC=0 IC=1A IB=0.1A IC=7A IB=0.7A IC=12A IB=1.2A IC=7A IB=0.7A IC=12A IB=1.2A VCB=250V IE=0 TC=125ae VCE=90V IB=0 VEB=9V IC=0 TC=125ae IC=0.3A ; VCE=5V IC=5A ; VCE=5V IC=12A ; VCE=1V IC=0.2A ; VCE=4V VCB=100V ;f=1MHz 30 25 5 20 100 MIN 100 250 10 TYP. SYMBOL VCEO(SUS) V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 fT Cob BUL56B MAX UNIT V V V 0.2 0.6 1.2 1.2 1.8 10 100 |I |I |I 100 10 100 90 60 V V V V V A A A MHz pF JMnic Product Specification www.jmnic.com Silicon Power Transistors PACKAGE OUTLINE BUL56B Fig.2 Outline dimensions (unindicated tolerance: 0.1mm) JMnic |
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